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制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部重置
应用所有
结果:
图片 制造商型号 库存情况 价格 库存 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM170HRM075NG

MSCSM170HRM075NG

MOSFET 4N-CH 1700V/1200V 337A

Microchip Technology

3,393 -
MSCSM170HRM075NG

数据手册

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 337A (Tc), 317A (Tc) 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V 3.2V @ 15mA, 2.8V @ 12mA 1068nC @ 20V, 928nC @ 20V 19800pF @ 1000V, 12100pF @ 1000V 1.492kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCM20XM16F4G

MSCM20XM16F4G

MOSFET 200V 77A SP4

Microchip Technology

3,729 196.25
MSCM20XM16F4G

数据手册

- Module Tube Active - - - 200V 77A (Tc) - - - - - - - - Chassis Mount SP4
MSCSM120TLM31C3AG

MSCSM120TLM31C3AG

MOSFET 4N-CH 1200V 89A SP3F

Microchip Technology

4,343 219.06

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
APTMC120AM25CT3AG

APTMC120AM25CT3AG

MOSFET 2N-CH 1200V 113A SP3

Microchip Technology

2,198 371.04
APTMC120AM25CT3AG

数据手册

- SP3 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 113A (Tc) 25mOhm @ 80A, 20V 2.2V @ 4mA (Typ) 197nC @ 20V 3800pF @ 1000V 500W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
MSCSM120TLM16C3AG

MSCSM120TLM16C3AG

MOSFET 4N-CH 1200V 173A SP3F

Microchip Technology

4,537 397.95

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM120DDUM16CTBL3NG

MSCSM120DDUM16CTBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

4,142 518.47

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM025CD3AG

MSCSM70AM025CD3AG

SIC 700V 538A D3

Microchip Technology

2,560 744.82
MSCSM70AM025CD3AG

数据手册

- Module Box Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount D3
MSCSM70TAM19CT3AG

MSCSM70TAM19CT3AG

MOSFET 6N-CH 700V 124A SP3F

Microchip Technology

4,662 303.66
MSCSM70TAM19CT3AG

数据手册

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70DUM017AG

MSCSM70DUM017AG

MOSFET 2N-CH 700V 1021A

Microchip Technology

5,247 719.69

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 1021A (Tc) 2.1mOhm @ 360A, 20V 2.4V @ 36mA 1935nC @ 20V 40500pF @ 700V 2750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM058CT6LIAG

MSCSM170AM058CT6LIAG

MOSFET 2N-CH 1700V 353A

Microchip Technology

3,712 912.27
MSCSM170AM058CT6LIAG

数据手册

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -