| 图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STPSC10065DDIODE SIL CARB 650V 10A TO220AC |
538 | 2.57 |
|
数据手册 |
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 130 µA @ 650 V | 670pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
STPSC10065DLFDIODE SIL CARB 650V 10A PWRFLAT |
2,074 | 3.00 |
|
数据手册 |
ECOPACK®2 | 8-PowerVDFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 130 µA @ 650 V | 670pF @ 0V, 1MHz | - | - | Surface Mount | PowerFlat™ (8x8) HV | -40°C ~ 175°C |
|
STPSC5H12DDIODE SIL CARB 1.2KV 5A TO220AC |
2,772 | 2.92 |
|
数据手册 |
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.5 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 450pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
STTH31AC06SWLDIODE GEN PURP 600V 30A TO247 |
187 | 2.70 |
|
数据手册 |
- | TO-247-3 | Tube | Active | Standard | 600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247 | -40°C ~ 175°C |
|
|
RURG3060-F085DIODE GEN PURP 600V 30A TO247-2 |
194 | 3.31 |
|
数据手册 |
- | TO-247-2 | Tube | Active | Avalanche | 600 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 250 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
STPSC10065DYDIODE SIL CARB 650V 10A TO220AC |
1,016 | 2.34 |
|
数据手册 |
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 130 µA @ 650 V | 670pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
STPSC10H065G-TRDIODE SIL CARBIDE 650V 10A D2PAK |
516 | 2.96 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C |
|
STPSC10065G2-TRDIODE SIL CARBIDE 650V 10A D2PAK |
1,206 | 2.78 |
|
数据手册 |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 130 µA @ 650 V | 670pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C |
|
|
MSC010SDA120KDIODE SIL CARB 1.2KV 10A TO220 |
178 | 3.14 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | - |
|
STPSC10H065G2-TRDIODE SIL CARBIDE 650V 10A D2PAK |
1,278 | 2.78 |
|
数据手册 |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK | -40°C ~ 175°C |
|
CD5819DIODE SCHOTTKY 40V 1A DIE |
392 | 3.43 |
|
数据手册 |
- | Die | Bulk | Active | Schottky | 40 V | 1A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Military | MIL-PRF-19500/586 | Surface Mount | Die | -55°C ~ 125°C |
|
STTH60RQ06WDIODE GEN PURP 600V 60A DO247 |
313 | 3.04 |
|
数据手册 |
- | DO-247-2 (Straight Leads) | Tube | Active | Standard | 600 V | 60A | - | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 80 µA @ 600 V | - | - | - | Through Hole | DO-247 | 175°C (Max) |
|
MSC010SDA120BDIODE SIL CARB 1.2KV 10A TO247 |
1,511 | 3.39 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | - |
|
JAN1N5552DIODE GEN PURP 600V 3A AXIAL |
152 | 3.96 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
STTH3006PIDIODE GEN PURP 600V 30A DOP3I |
444 | 3.64 |
|
数据手册 |
- | DOP3I-2 Insulated (Straight Leads) | Tube | Active | Standard | 600 V | 30A | 1.85 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 25 µA @ 600 V | - | - | - | Through Hole | DOP3I | 175°C (Max) |
|
1N5619DIODE GEN PURP 600V 1A AXIAL |
301 | 9.93 |
|
数据手册 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
FFSP2065B-F085DIODE SIL CARB 650V 20A TO220-2 |
660 | 2.50 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
FFSD2065BDIODE SIL CARB 650V 23.4A DPAK |
1,771 | 4.66 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 23.4A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
STPSC15H12DDIODE SIL CARB 1.2KV 15A TO220AC |
2,768 | 6.74 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 1200 V | 1200pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
1N5806E3DIODE GEN PURP 150V 1A A AXIAL |
123 | 4.18 |
|
数据手册 |
- | Axial | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |