| 图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STTH12T06DIDIODE GP 600V 12A TO220AC INS |
548 | 2.45 |
|
数据手册 |
- | TO-220-2 Insulated, TO-220AC | Tube | Active | Standard | 600 V | 12A | 2.95 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 20 µA @ 600 V | - | - | - | Through Hole | TO-220AC ins | -40°C ~ 175°C |
|
STTH30RQ06DYDIODE GEN PURP 600V 30A TO220AC |
998 | 1.84 |
|
数据手册 |
- | TO-220-2 | Tube | Active | Standard | 600 V | 30A | 2.95 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 40 µA @ 600 V | - | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
FFSP1065BDIODE SIL CARB 650V 11A TO220-2 |
628 | 3.17 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 11A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
FFSP0665ADIODE SIL CARB 650V 8.8A TO220L |
688 | 2.76 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8.8A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
FFSD0865BDIODE SIL CARB 650V 11.6A DPAK |
148 | 2.91 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.6A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 336pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
|
APT40DQ120SGDIODE GEN PURP 1.2KV 40A D3PAK |
958 | 2.67 |
|
数据手册 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | 1200 V | 40A | 3.4 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 350 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
FFSP1065B-F085DIODE SIL CARB 650V 10A TO220-2 |
789 | 1.41 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
STPSC8H065DDIODE SIL CARB 650V 8A TO220AC |
794 | 2.66 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 414pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
STTH30M06SPFDIODE GEN PURP 600V 30A TO3PF |
876 | 2.30 |
|
数据手册 |
- | TO-3P-3 Full Pack | Tube | Active | Standard | 600 V | 30A | 3.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 60 µA @ 600 V | - | - | - | Through Hole | TO-3PF | 175°C (Max) |
|
FFSD0865B-F085DIODE SIL CARB 650V 11.6A DPAK |
3,693 | 2.50 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.6A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 336pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
STTH30R04DYDIODE GEN PURP 400V 30A TO220AC |
772 | 2.52 |
|
数据手册 |
- | TO-220-2 | Tube | Active | Standard | 400 V | 30A | 1.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 15 µA @ 400 V | - | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
FFSM0665BDIODE SIL CARB 650V 9.1A 4PQFN |
2,980 | 3.05 |
|
数据手册 |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 9.1A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 259pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
FFSP0865ADIODE SIL CARB 650V 13A TO220-2 |
790 | 1.74 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 13A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 463pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
STPSC8H065BY-TRDIODE SIL CARBIDE 650V 8A DPAK |
4,209 | 2.36 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | - | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 414pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | DPAK | -40°C ~ 175°C |
|
STPSC10065GY-TRDIODE SIL CARBIDE 650V 10A D2PAK |
621 | 2.92 |
|
数据手册 |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 130 µA @ 650 V | 670pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | D2PAK | -40°C ~ 175°C |
|
FFSM0465ADIODE SIL CARBIDE 650V 4A 4PQFN |
4,028 | 2.01 |
|
数据手册 |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 247pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
FFSB1065BDIODE SIL CARB 650V 27A D2PAK-2 |
686 | 2.70 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 27A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
STPSC8H065DLFDIODE SIL CARB 650V 8A POWERFLAT |
5,264 | 2.93 |
|
数据手册 |
ECOPACK®2 | 8-PowerVDFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 460pF @ 0V, 1MHz | - | - | Surface Mount | PowerFlat™ (8x8) HV | -40°C ~ 175°C |
|
|
CDLL5818DIODE SCHOTTKY 30V 1A DO213AB |
190 | 3.14 |
|
数据手册 |
- | DO-213AB, MELF | Bulk | Active | Schottky | 30 V | 1A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 0.9pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 150°C |
|
FFSM0665ADIODE SIL CARBIDE 650V 8A 4PQFN |
2,860 | 2.20 |
|
数据手册 |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 365pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |