| 图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NRVBB4030T4GDIODE SCHOTTKY 30V 40A D2PAK |
6,765 | 1.98 |
|
数据手册 |
SWITCHMODE™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 40A | 550 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 30 V | - | - | - | Surface Mount | D2PAK | -65°C ~ 175°C |
|
FFSD0465ADIODE SIL CARB 650V 7.6A DPAK |
2,442 | 1.26 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 7.6A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
|
APT30D60SGDIODE GEN PURP 600V 30A D3 |
168 | 2.21 |
|
数据手册 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | 600 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 250 µA @ 600 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
|
APT60DQ60SGDIODE GEN PURP 60A D3PAK |
122 | 2.56 |
|
数据手册 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | - | 60A | 2.4 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 25 µA @ 600 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
FFSH1665ADIODE SIL CARB 650V 23A TO247-2 |
8,896 | 5.46 |
|
数据手册 |
- | TO-247-2 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 887pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 150°C |
|
FFSP0465ADIODE SIL CARB 650V 8.6A TO220-2 |
792 | 1.53 |
|
数据手册 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8.6A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
FFSB0465ADIODE SIL CARB 650V 7.7A D2PAK-2 |
770 | 1.58 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 7.7A | 1.75 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 258pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
MBRB2515LT4GDIODE SCHOTTKY 15V 25A D2PAK |
214 | 2.50 |
|
数据手册 |
SWITCHMODE™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Schottky | 15 V | 25A | 450 mV @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15 mA @ 15 V | - | - | - | Surface Mount | D2PAK | 100°C (Max) |
|
STPSC6H12B-TR1DIODE SIL CARBIDE 1.2KV 6A DPAK |
7,403 | 2.74 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 6A | 1.9 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 330pF @ 0V, 1MHz | - | - | Surface Mount | DPAK | -40°C ~ 175°C |
|
FFSPF0665ADIODE SIC 650V 6A TO220F-2FS |
898 | 2.60 |
|
数据手册 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
FFSD0865ADIODE SIL CARBIDE 650V 15A DPAK |
2,500 | 1.90 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 463pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
1N486BDIODE GEN PURP 250V 200MA DO35 |
14,945 | 3.38 |
|
数据手册 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 250 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 nA @ 225 V | - | - | - | Through Hole | DO-204AH (DO-35) | 175°C |
|
STPSC10H065DYDIODE SIL CARB 650V 10A TO220AC |
1,108 | 2.82 |
|
数据手册 |
ECOPACK®2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.75 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 480pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
STPSC10C065RYDIODE SIL CARBIDE 650V 10A I2PAK |
972 | 2.42 |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 480pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | I2PAK | -40°C ~ 175°C |
|
RHRG5060DIODE GEN PURP 600V 50A TO247-2 |
1,778 | 2.56 |
|
数据手册 |
- | TO-247-2 | Tube | Active | Avalanche | 600 V | 50A | 2.1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
STPSC12C065DYDIODE SIL CARB 650V 12A TO220AC |
154 | 3.30 |
|
数据手册 |
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 650 V | 530pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
FFSPF0865ADIODE SIC 650V 8A TO220F-2FS |
915 | 2.14 |
|
数据手册 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 463pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
|
STTH30S06WDIODE GEN PURP 600V 30A DO247-2 |
521 | 3.18 |
|
数据手册 |
- | DO-247-2 (Straight Leads) | Tube | Obsolete | Standard | 600 V | 30A | 3.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 50 µA @ 600 V | - | - | - | Through Hole | - | -40°C ~ 175°C |
|
FFSPF1065ADIODE SIC 650V 10A TO220F-2FS |
930 | 2.44 |
|
数据手册 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
STPSC1006DDIODE SIL CARB 600V 10A TO220AC |
166 | 3.38 |
|
数据手册 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 650pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |