| 图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STPSC12H065DYDIODE SIL CARB 650V 12A TO220AC |
219 | 2.80 |
|
数据手册 |
ECOPACK®2 | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.75 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 650 V | 600pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
FFH75H60SDIODE GEN PURP 600V 75A TO247-2 |
1,196 | 3.63 |
|
数据手册 |
- | TO-247-2 | Tube | Obsolete | Standard | 600 V | 75A | 2.2 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
PCFFS4065AFDIODE SIL CARBIDE 650V 40A DIE |
1,364 | 7.79 |
|
- |
- | Die | Tray | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.75 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1989pf @ 1V, 100kHz | - | - | Surface Mount | Die | -55°C ~ 175°C |
|
FFSM0865ADIODE SIL CARB 650V 9.6A 4PQFN |
3,000 | 2.58 |
|
数据手册 |
- | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 9.6A | 1.75 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 463pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
FFSB1265ADIODE SIL CARB 650V 14A D2PAK-3 |
670 | 2.59 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 14A | 1.75 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 665pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -65°C ~ 175°C |
|
PCFF75H60FRECTIFIER WAFER DIE |
2,240 | - |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NDSH10120C-F155SIC DIODE GEN2.0 1200V TO247-2L |
450 | - |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 12A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 680pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
1N6643USDIODE GEN PURP 50V 300MA D-5B |
129 | 13.10 |
|
数据手册 |
- | SQ-MELF, E | Bulk | Active | Standard | 50 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 50 nA @ 50 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | D-5B | -65°C ~ 175°C |
|
FFSPF2065ADIODE SIC 650V 20A TO220F-2FS |
1,284 | 8.52 |
|
数据手册 |
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1085pF @ 1V, 100kHz | - | - | Through Hole | TO-220F-2FS | -55°C ~ 175°C |
|
FFSH3065ADIODE SIL CARB 650V 26A TO247-2 |
2,045 | 11.61 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 26A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1705pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSH10120ADIODE SIL CARB 1.2KV 17A TO247-2 |
277 | 4.03 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 17A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSH2065ADIODE SIL CARB 650V 25A TO247-2 |
260 | 7.33 |
|
数据手册 |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 25A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 1085pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
JANTXV1N6642USDIODE GEN PURP 100V 300MA D-5B |
108 | 7.32 |
|
数据手册 |
- | SQ-MELF, E | Bulk | Active | Standard | 100 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 100 V | - | Military | MIL-PRF-19500/578 | Surface Mount | D-5B | -65°C ~ 175°C |
|
FFSH10120A-F155DIODE SIL CARB 1.2KV 17A TO247-2 |
180 | 4.03 |
|
数据手册 |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 17A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 612pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSH2065ADN-F155DIODE SIL CARB 650V 13A TO247-3 |
632 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 13A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
NDSH20120C-F155SIC DIODE GEN2.0 1200V TO247-2L |
415 | - |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 26A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1480pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
STPSC15H12DYDIODE SIL CARB 1.2KV 15A TO220AC |
990 | 6.98 |
|
数据手册 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 1200 V | 1200pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
STPSC20H12G2-TRDIODE SIL CARB 1.2KV 20A D2PAK |
1,000 | 9.33 |
|
数据手册 |
ECOPACK®2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1650pF @ 0V, 1MHz | - | - | Surface Mount | D2PAK HV | -40°C ~ 175°C |
|
FFSH15120ADIODE SIL CARB 1.2KV 26A TO247-2 |
229 | 8.37 |
|
数据手册 |
- | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 26A | 1.75 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 936pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
FFSH3065ADN-F155DIODE SIL CARB 650V 23A TO247-3 |
447 | 7.32 |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 23A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 887pF @ 1V, 100kHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |