| 图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STTH802FPDIODE GEN PURP 200V 8A TO220FPAC |
3,280 | 1.18 |
|
数据手册 |
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 200 V | 8A | 1.05 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 6 µA @ 200 V | - | - | - | Through Hole | TO-220FPAC | 175°C (Max) |
|
EGP30JDIODE GEN PURP 600V 3A DO201AD |
591 | 0.46 |
|
数据手册 |
- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 75pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
|
CD4148DIODE GEN PURP 75V 200MA DIE |
868 | 0.79 |
|
数据手册 |
- | Die | Tray | Active | Standard | 75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | - | - | - | Surface Mount | Die | -55°C ~ 175°C |
|
|
APT30DQ100KGDIODE GEN PURP 1KV 30A TO220 |
1,231 | 0.77 |
|
数据手册 |
- | TO-220-2 | Tube | Active | Standard | 1000 V | 30A | 3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 295 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
STPS30SM120SFPDIODE SCHOTT 120V 30A TO220FPAB |
3,927 | 1.26 |
|
数据手册 |
ECOPACK®2 | TO-220-3 Full Pack | Tube | Active | Schottky | 120 V | 30A | 950 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 275 µA @ 120 V | - | - | - | Through Hole | TO-220FPAB | 150°C (Max) |
|
|
STPS20L15DDIODE SCHOTTKY 15V 20A TO220AC |
2,122 | - |
|
数据手册 |
- | TO-220-2 | Tube | Active | Schottky | 15 V | 20A | 410 mV @ 19 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6 mA @ 15 V | - | - | - | Through Hole | TO-220AC | 125°C (Max) |
|
1N5616DIODE GEN PURP 400V 1A AXIAL |
3,826 | 9.93 |
|
数据手册 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
STTH1512PIDIODE GEN PURP 1.2KV 15A DOP3I |
4,100 | 3.62 |
|
数据手册 |
- | DOP3I-2 Insulated (Straight Leads) | Tube | Active | Standard | 1200 V | 15A | 2.1 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 105 ns | 15 µA @ 1200 V | - | - | - | Through Hole | DOP3I | 175°C (Max) |
|
JANTX1N5620DIODE GEN PURP 800V 1A AXIAL |
3,374 | 4.51 |
|
数据手册 |
- | A, Axial | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
JANTX1N5551DIODE GEN PURP 400V 5A AXIAL |
1,418 | 17.20 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 400 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5711DIODE SCHOTTKY 70V 33MA DO35 |
4,849 | 4.62 |
|
- |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
JANTX1N5809DIODE GEN PURP 100V 3A AXIAL |
1,004 | 5.70 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5618USDIODE GEN PURP 600V 1A D-5A |
3,576 | 5.25 |
|
数据手册 |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | - | - | Surface Mount | D-5A | -65°C ~ 200°C |
|
1N5420DIODE GEN PURP 600V 3A B AXIAL |
4,288 | 13.52 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N6640USDIODE GEN PURP 50V 300MA D-5D |
2,162 | 6.47 |
|
数据手册 |
- | SQ-MELF, D | Bulk | Active | Standard | 50 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | Military | MIL-PRF-19500/609 | Surface Mount | D-5D | -65°C ~ 175°C |
|
MSC010SDA170BDIODE SIL CARB 1.7KV 31A TO247-3 |
1,977 | 6.21 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 31A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 820pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
1N5802USDIODE GEN PURP 50V 1A D-5A |
2,069 | 6.74 |
|
数据手册 |
- | SQ-MELF, A | Bulk | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
MSC050SDA070SDIODE SIL CARBIDE 700V 88A D3PAK |
3,219 | 8.50 |
|
数据手册 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 88A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 700 V | 2034pF @ 1V, 1MHz | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
JANTX1N5420USDIODE GEN PURP 600V 3A D-5B |
2,596 | 10.29 |
|
数据手册 |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
|
MSC050SDA120BDIODE SIC 1.2KV 109A TO247-2 |
1,555 | 11.90 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 109A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 246pF @ 400V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |