| 图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
APT15D60KGDIODE GP 600V 15A TO220 |
4,562 | 1.25 |
|
数据手册 |
- | TO-220-2 | Tube | Active | Standard | 600 V | 15A | 1.8 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 250 µA @ 600 V | - | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
STTH1210DYDIODE GEN PURP 1KV 12A TO220AC |
3,039 | 2.14 |
|
数据手册 |
- | TO-220-2 | Tube | Active | Standard | 1000 V | 12A | 2 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 10 µA @ 1000 V | - | Automotive | AEC-Q101 | Through Hole | TO-220AC | -40°C ~ 175°C |
|
STTH30R06WDIODE GEN PURP 600V 30A DO247 |
1,735 | 2.64 |
|
数据手册 |
- | DO-247-2 (Straight Leads) | Tube | Active | Standard | 600 V | 30A | 1.85 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 70 ns | 25 µA @ 600 V | - | - | - | Through Hole | DO-247 | 175°C (Max) |
|
MSC010SDA070KDIODE SIL CARB 700V 10A TO220-2 |
4,512 | 2.23 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | - |
|
STPSC8065DDIODE SIL CARB 650V 8A TO220AC |
2,870 | 2.48 |
|
数据手册 |
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.45 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 105 µA @ 650 V | 540pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
|
STBR3008WYDIODE GEN PURP 800V 30A DO247 |
1,137 | 2.36 |
|
数据手册 |
- | DO-247-2 (Straight Leads) | Tube | Active | Standard | 800 V | 30A | 1.1 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 800 V | - | Automotive | AEC-Q101 | Through Hole | DO-247 | -40°C ~ 175°C |
|
STTH60R04WDIODE GEN PURP 400V 60A DO247 |
1,999 | 4.42 |
|
数据手册 |
- | DO-247-2 (Straight Leads) | Tube | Active | Standard | 400 V | 60A | 1.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 60 µA @ 400 V | - | - | - | Through Hole | DO-247 | -40°C ~ 175°C |
|
STTH60L06WDIODE GEN PURP 600V 60A DO247 |
2,324 | 4.49 |
|
数据手册 |
- | DO-247-2 (Straight Leads) | Tube | Active | Standard | 600 V | 60A | 1.55 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 105 ns | 50 µA @ 600 V | - | - | - | Through Hole | DO-247 | 175°C (Max) |
|
|
JANTX1N6638DIODE GEN PURP 125V 300MA D5B |
1,294 | 6.90 |
|
数据手册 |
- | D, Axial | Bulk | Active | Standard | 125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 125 V | - | Military | MIL-PRF-19500/578 | Through Hole | D-5D | -65°C ~ 175°C |
|
JANTX1N5418DIODE GEN PURP 400V 3A AXIAL |
4,386 | 17.66 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5550DIODE GEN PURP 200V 5A AXIAL |
2,790 | 17.20 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 200 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5553DIODE GEN PURP 800V 5A AXIAL |
4,375 | 5.88 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 800 V | 5A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
APT100D60B2GDIODE GEN PURP 600V 100A TO247 |
3,121 | 5.27 |
|
数据手册 |
- | TO-247-2 | Tube | Active | Standard | 600 V | 100A | - | - | - | - | - | - | - | Through Hole | TO-247 | - |
|
MSC020SDA120BDIODE SIL CARB 1.2KV 49A TO247 |
2,366 | 7.77 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 49A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1130pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
MSC050SDA070BDIODE SIL CARBIDE 700V 50A TO247 |
4,833 | 7.86 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 50A | 1.5 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | - |
|
1N6621USDIODE GEN PURP 440V 1.2A A-MELF |
4,347 | 9.12 |
|
数据手册 |
- | SQ-MELF, A | Bulk | Active | Standard | 440 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
|
MSC030SDA120BCTDIODE SIL CARB 1.2KV 65A TO247-3 |
2,068 | 14.30 |
|
数据手册 |
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 65A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 141pF @ 400V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
UES1306DIODE GEN PURP 400V 3A AXIAL |
1,081 | 17.50 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 400 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 20 µA @ 400 V | - | - | - | Through Hole | B, Axial | -55°C ~ 150°C |
|
MSC030SDA170BDIODE SIL CARB 1.7KV 82A TO247 |
3,899 | 17.34 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 82A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 2070pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
|
|
APTDF500U40GDIODE GEN PURP 400V 500A LP4 |
4,377 | 75.30 |
|
数据手册 |
- | LP4 | Bulk | Active | Standard | 400 V | 500A | 1.5 V @ 500 A | Fast Recovery =< 500ns, > 200mA (Io) | 120 ns | 2.5 mA @ 400 V | - | - | - | Chassis Mount | LP4 | - |