| 图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NRVTS30120MFST3GDIODE SCHOTTKY 120V 30A 5DFN |
4,304 | 0.72 |
|
数据手册 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | Schottky | 120 V | 30A | 950 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 120 V | 1470pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
FFSP0665BDIODE SIL CARB 650V 8A TO220-2 |
483 | 1.42 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 259pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
FFSH1065B-F155650V 10A SIC SBD GEN 1.5 |
153 | - |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 421pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
MBR30170MFST3GDIODE SCHOTTKY 170V 30A 5DFN |
5,000 | 0.93 |
|
数据手册 |
- | 8-PowerTDFN, 5 Leads | Tape & Reel (TR) | Active | Schottky | 170 V | 30A | 890 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 170 V | 821pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
|
FFSB0665BDIODE SIL CARB 650V 8A D2PAK-2 |
712 | 1.61 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | - | 40 µA @ 650 V | 259pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
FFSB0865BDIODE SIL CARB 650V 10.1A D2PAK |
765 | 2.91 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10.1A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | - | 40 µA @ 650 V | 336pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
FFSD1065BDIODE SIL CARB 650V 13.5A DPAK |
4,116 | 2.47 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 13.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 424pF @ 1V, 100kHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
FFSM0865BDIODE SIL CARB 650V 11.6A 4PQFN |
2,980 | 3.66 |
|
数据手册 |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.6A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 336pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
FFSB0665ADIODE SIL CARB 650V 9A D2PAK-3 |
800 | 1.78 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 9A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
FFSP2065BDIODE SIL CARB 650V 22.5A TO220 |
397 | 4.70 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 22.5A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
FFSD1065B-F085DIODE SIL CARB 650V 13.5A DPAK |
1,968 | 4.06 |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 13.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 424pF @ 1V, 100kHz | Automotive | AEC-Q101 | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
JAN1N5615DIODE GEN PURP 200V 1A AXIAL |
853 | 3.45 |
|
数据手册 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | - | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
FFSM1065BDIODE SIL CARB 650V 13.5A 4PQFN |
4,519 | 3.52 |
|
数据手册 |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 13.5A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 424pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
STPSC12065DDIODE SIL CARB 650V 12A TO220AC |
749 | 1.85 |
|
数据手册 |
ECOPACK®2 | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.45 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 650 V | 750pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -40°C ~ 175°C |
|
FFSM1265ADIODE SIL CARB 650V 12.5A 4PQFN |
2,585 | 3.10 |
|
数据手册 |
- | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12.5A | 1.75 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 665pF @ 1V, 100kHz | - | - | Surface Mount | 4-PQFN (8x8) | -55°C ~ 175°C |
|
|
APT60D120SGDIODE GEN PURP 1.2KV 60A D3 |
156 | 3.18 |
|
数据手册 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | 1200 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 250 µA @ 1200 V | - | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
FFSB2065BDIODE SIL CARB 650V 22.8A D2PAK |
2,178 | 4.86 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 22.8A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 866pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
1N3600UR/TRSIGNAL OR COMPUTER DIODE |
177 | - |
|
数据手册 |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 75 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | 2.5pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
FFSB1065ADIODE SCHOTTKY 650V 14A D2PAK-3 |
800 | 2.19 |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 14A | 1.75 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 650 V | 575pF @ 1V, 100kHz | - | - | Surface Mount | TO-263 (D2PAK) | -55°C ~ 175°C |
|
FFSP3065B-F085DIODE SIL CARB 650V 30A TO220-2 |
1,600 | 4.70 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1280pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-220-2 | -55°C ~ 175°C |