| 图片 | 制造商型号 | 库存情况 | 价格 | 库存 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FFSH3065BDIODE SIL CARB 650V 37A TO247-2 |
326 | 6.25 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 37A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 1260pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
JAN1N5809DIODE GEN PURP 100V 6A AXIAL |
117 | 12.63 |
|
数据手册 |
- | B, Axial | Bulk | Active | Standard | 100 V | 6A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
|
FFSP15120ADIODE SIL CARB 1.2KV 15A TO220L |
574 | 7.22 |
|
数据手册 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.75 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 1200 V | 936pF @ 1V, 100kHz | - | - | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
|
JANTX1N914URDIODE GEN PURP 75V 200MA DO213AA |
233 | 5.17 |
|
数据手册 |
- | DO-213AA | Bulk | Active | Standard | 75 V | 200mA | 1.2 V @ 50 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Military | MIL-PRF-19500/116 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
|
1N3070-1DIODE GEN PURP 175V 100MA DO7 |
257 | 4.90 |
|
数据手册 |
- | DO-204AA, DO-7, Axial | Bulk | Active | Standard | 175 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | - | - | - | - | Through Hole | DO-7 | -65°C ~ 175°C |
|
1N3070UR-1/TRSIGNAL OR COMPUTER DIODE |
135 | - |
|
数据手册 |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 175 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 175 V | - | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
JANTX1N5809USDIODE GEN PURP 100V 3A B SQ-MELF |
108 | 6.64 |
|
数据手册 |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
1N5418USDIODE GEN PURP 400V 3A D-5B |
102 | 6.86 |
|
数据手册 |
- | SQ-MELF, B | Bulk | Active | Standard | 400 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
FFSH5065B-F155650V 50A SIC SBD GEN 1.5 |
435 | - |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 48A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 2030pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
1N6628DIODE GEN PURP 600V 1.75A A-PAK |
102 | 7.39 |
|
数据手册 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 600 V | - | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
|
CDLL5711/TRDIODE SCHOTTKY 50V 33MA DO213AA |
101 | 7.79 |
|
数据手册 |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 50 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
JANTX1N5711UR-1/TRDIODE SCHOTTKY 50V 33MA DO213AA |
829 | 9.10 |
|
数据手册 |
- | DO-213AA | Tape & Reel (TR) | Active | Schottky | 50 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Military | MIL-PRF-19500/444 | Surface Mount | DO-213AA | -65°C ~ 150°C |
|
NVDSH20120CDIODE SIL CARB 1.2KV 26A TO247-2 |
447 | 10.50 |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 26A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1480pF @ 1V, 100kHz | Automotive | AEC-Q101 | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
STPSC20G12WLYAUTOMOTIVE 1200 V, 20A POWER SCH |
170 | - |
|
数据手册 |
ECOPACK®2 | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.5 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 1200 V | - | Automotive | AEC-Q101 | Through Hole | DO-247 LL | -55°C ~ 175°C |
|
STPSC30G12WL1200 V, 20 A HIGH SURGE SILICON |
166 | - |
|
数据手册 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
1N5822SCHOTTKY DO201 40V 3A 150C |
131 | 0.45 |
|
数据手册 |
- | B, Axial | Bulk | Active | Schottky | 40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | - | - | Through Hole | B, Axial | -65°C ~ 125°C |
|
STPSC40G12WL1200 V, 20 A HIGH SURGE SILICON |
200 | - |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STPSC30G12WLYAUTOMOTIVE 1200 V, 30 A SILICON |
115 | - |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 225 µA @ 1200 V | 2272pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | DO-247 LL | -55°C ~ 175°C |
|
STPSC40G12WLYAUTOMOTIVE 1200 V, 40A POWER SCH |
200 | - |
|
数据手册 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NDSH50120C-F155SIC DIODE GEN2.0 1200V TO247-2L |
439 | - |
|
数据手册 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 53A | 1.75 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 3691pF @ 1V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |